Plasma etching for fabrication of complex nanophotonic lasers from bonded InP semiconductor layers

Integrating optically active III-V materials on silicon/insulator platforms is one potential path towards improving the energy efficiency and performance of modern computing. Here we demonstrate applicability direct wafer bonding combined with plasma etching to fabrication complex nanophotonic systems out InP layers. We explore optimise InP, validating existing processes developing improved ones. use microdisk lasing as a way evaluate fidelity, that can create interest us: coupled disk cavities random network lasers.